Product Summary

The PM150RSE120 is a intelligent power module. It adopts new 4th generation planar IGBT chip, which performance is improved by 1渭m fine rule process.

Parametrics

PM150RSE120 absolute maximum ratings: (1)Collector-Emitter Voltage, VD = 15V, VCIN = 15V, VCES: 1200V; (2)Collector Current, TC = 25鈩? 卤IC: 150V; (3)Collector Current (Peak), TC = 25鈩? 卤ICP: 300A; (4)Collector Dissipation, TC = 25鈩? PC: 781W; (5)Junction Temperature, Tj: 鈥?0 to +150鈩?

Features

PM150RSE120 features: (1)3蠁 150A, 1200V Current-sense IGBT for 15kHz switching; (2)50A, 1200V Current-sense regenerative brake IGBT; (3)Monolithic gate drive & protection logic; (4)Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage; (5)Acoustic noise-less 30kW class inverter application.

Diagrams

<IMG border=0 alt="PM150RSE120 PACKAGE OUTLINES" src="http://www.seekic.com/uploadfile/ic-mfg/201252113222161.jpg">

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PM150RSE120
PM150RSE120

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PM150RSE120
PM150RSE120

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